BSZ440N10NS3 G

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOS™3Power-Transistor,100V BSZ440N10NS3G DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,100V BSZ440N10NS3G 1Description S3O8 8 7 Features •Verylowgatechargeforhighfrequencyapplications •Optimizedfordc-dcconversion •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 1 Table1KeyPerformanceParameters 2 3 6 5 4 S1 8D S2 7D Parameter Value Unit VDS 100 V S3 6D RDS(on),max 44 mΩ G4 5D ID 18 A Type/OrderingCode Package Marking RelatedLinks BSZ440N10NS3 G PG-TSDSON-8 440N10N - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.1,2015-02-06 OptiMOSª3Power-Transistor,100V BSZ440N10NS3G TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.1,2015-02-06 OptiMOSª3Power-Transistor,100V BSZ440N10NS3G 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings at 25 °C Parameter Symbol Continuous drain current Values Unit Note/TestCondition 18 11 5.3 A TC=25°C TC=100°C TA=25°C,RthJA=50K/W1) - 72 A TC=25°C - - 17 mJ ID=12A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 29 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 4.3 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area1) - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) see figure 3 Final Data Sheet 4 Rev.2.1,2015-02-06 OptiMOSª3Power-Transistor,100V BSZ440N10NS3G 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.7 3.5 V VDS=VGS,ID=12µA - 0.01 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 38 48 44 86 mΩ VGS=10V,ID=12A VGS=6V,ID=6A Gate resistance RG - 1.5 - Ω - Transconductance gfs 8 15 - S |VDS|>2|ID|RDS(on)max,ID=12A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 480 640 pF VGS=0V,VDS=50V,f=1MHz Output capacitance Coss - 87 120 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 6 - pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 4.3 - ns VDD=50V,VGS=10V,ID=6A, RG=1.6Ω Rise time tr - 1.8 - ns VDD=50V,VGS=10V,ID=6A, RG=1.6Ω Turn-off delay time td(off) - 9.1 - ns VDD=50V,VGS=10V,ID=6A, RG=1.6Ω Fall time tf - 2.0 - ns VDD=50V,VGS=10V,ID=6A, RG=1.6Ω Unit Note/TestCondition Input capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 2.2 - nC VDD=50V,ID=6A,VGS=0to10V Gate to drain charge Qgd - 1.3 - nC VDD=50V,ID=6A,VGS=0to10V Switching charge Qsw - 2.0 - nC VDD=50V,ID=6A,VGS=0to10V Gate charge total Qg - 6.8 9.1 nC VDD=50V,ID=6A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=50V,ID=6A,VGS=0to10V Qoss - 9.0 12 nC VDD=50V,VGS=0V 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 5 Rev.2.1,2015-02-06 OptiMOSª3Power-Transistor,100V BSZ440N10NS3G Table7Reversediode Parameter Symbol Diode continous forward current Values Unit Note/TestCondition 18 A TC=25°C - 72 A TC=25°C - 1 1.2 V VGS=0V,IF=18A,Tj=25°C trr - 44 - ns VR=50V,IF=6A,diF/dt=100A/µs Qrr - 61 - nC VR=50V,IF=6A,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 6 Rev.2.1,2015-02-06 OptiMOSª3Power-Transistor,100V BSZ440N10NS3G 5Electricalcharacteristicsdiagrams Diagram2:Draincurrent 40 20 30 15 ID[A] Ptot[W] Diagram1:Powerdissipation 20 10 0 10 5 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 102 100 ns 0.5 ZthJC[K/W] ID[A] 1 µs 10 µs 101 100 µs 100 0.2 0.1 1 ms 0.05 DC 0.02 100 0.01 single pulse 10-1 10-1 100 101 102 103 10-1 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.1,2015-02-06 OptiMOSª3Power-Transistor,100V BSZ440N10NS3G Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 50 70 5V 5.5 V 60 40 6V 10 V 7V 50 30 RDS(on)[mΩ] 7V ID[A] 6V 20 5.5 V 40 10 V 30 20 5V 10 10 4.5 V 0 0 1 2 0 3 0 10 20 VDS[V] 30 40 50 60 25 30 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 40 30 25 30 gfs[S] ID[A] 20 20 15 10 10 5 150 °C 0 0 2 25 °C 4 6 0 0 5 VGS[V] 15 20 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 10 gfs=f(ID);Tj=25°C 8 Rev.2.1,2015-02-06 OptiMOSª3Power-Transistor,100V BSZ440N10NS3G Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 90 4.0 80 3.5 70 3.0 120 µA 60 50 VGS(th)[V] RDS(on)[mΩ] 2.5 98 % typ 40 12 µA 2.0 1.5 30 1.0 20 0.5 10 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=12A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 25 °C, 98% 150 °C, 98% 103 Ciss Coss 102 IF[A] C[pF] 102 101 101 100 Crss 0 20 40 60 80 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.1,2015-02-06 OptiMOSª3Power-Transistor,100V BSZ440N10NS3G Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 10 8 80 V 50 V VGS[V] IAS[A] 6 25 °C 101 100 °C 20 V 4 125 °C 2 100 10-1 100 101 102 103 0 0 tAV[µs] 2 4 6 8 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=6Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 110 VBR(DSS)[V] 105 100 95 90 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.1,2015-02-06 OptiMOSª3Power-Transistor,100V BSZ440N10NS3G 6PackageOutlines Figure1OutlinePG-TSDSON-8,dimensionsinmm/inches Final Data Sheet 11 Rev.2.1,2015-02-06 OptiMOSª3Power-Transistor,100V BSZ440N10NS3G RevisionHistory BSZ440N10NS3 G Revision:2015-02-06,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2015-02-06 Insert pin numbered package drawing and trr and Qrr values WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.1,2015-02-06